, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 BLX91A u.h.f. power transistor n-p-n silicon planar epitaxial transistor intended for transmitting applications in class-a, b or c with a supply voltage up to 28 v. the transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. gold metallization ensures extremely high reliability. it has a capstan envelope with a moulded cap. all leads are isolated from the stud, quick reference data ft.f. performance up to t^ - 25 c in an unneutralized common-emitter olass b circuit mode of operation c.w. c.w. c.w. c.w. vce v 24 28 28 28 f mhz 470 470 470 1000 ps mw typ. 60 < 80 typ. 80 typ. 400 pl w 0,85 1,0 1,45 1,4 ig ma typ. 87 < 71 typ. 86 typ.100 gp dfi typ. 12,3 > 11,0 typ. 12,6 typ. 5,4 v % typ. 63 > 50 typ. 60 typ. 50 z| n _ ? 2,5 + jo,2 ? yl ms _ ? 3,4 -j16 ? mechanical data fig. 1 sot-48/3. dimensions in mm torque on nut: min, 0,75 nm diameter of clearance hole in heatsink; max. 4,2 mm. (7,5 kg cm) mounting hole to have no burrs at either end, max. 0,85 nm de-burring must leave surface flat; do not chamfer or (8,5 kg cm) countersink either end of hole. when locking is required an adhesive is preferred instead of a lock washer. nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information ftirnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. ouolih/
ratings limiting values in accordance with the absolute maximum system (iec134) voltages collectox-base voltage (open emitter) peak value collector-emitter voltage (vfljj = 0) peak value collector-emitter voltage (open base) emitter-base voltage (open collector) currents collector current (d. c.) collector current (peak value); f >10 mhz power dissipation total power dissipation up to tf, ? 70 c f&10 mhz temperatures storage temperature operating junction temperature thermal resistance from junction to mounting base prom mounting base to heatsink vcbom vcesm vceo vebo 'c icm max. max. max. max. max. 65 33 4,0 400 800 v v v ma ma plot 4,0 w tstg tj rth j-rob rth mb-h -65 to -h50 max. 200 32,5 0,6 c c k/w k/w characteristics tj = 25 c unless otherwise specified breakdown voltages collector-base voltage open emitter, ic = 10 ma collector-emitter voltage vbb = ' 'c = 10 *"*. collector-emitter voltage open base, lc = 25 ma emitter-base voltage open collector, ip. = 1,0 ma d. c. current gain 1c = 100 ma; vce = 5.0 v transition frequency 1c = 50 ma; vce = 5,0 v collector capacitance at f - 1 mhz ie - ie ? 0; vcb =* 10 v emitter capacitance at f ? 1 mhz ig = ic = 0; veb = o feedback capacitance at t = 1 mhz ic= smasvce = 10 v collector-stud capacitance v(br)cbo > v(br)ces > v(br)ceo > v(br)ebo > "fb typ. 65 65 33 4,0 10 35 v v v v typ. 1,2 ghz typ. 3,5 pf typ. 11 pf typ. 2,5 pf typ. 2,0 pf
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